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E060N3P5DH1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E060N3P5DH1 product

E060N3P5DH1

Component

N-channel MOSFET60 V3.5 mOhmTO-263Power switching

E060N3P5DH1 is a 60 V TO-263 N-channel MOSFET specified for low-resistance power switching, with 3.5 mOhm maximum RDS(on) at 10 V gate drive.

Best for

  • Low-voltage power switching
  • DC/DC conversion
  • PD charger power stages
  • Motor drivers

Avoid if

  • Drain-source voltage can exceed 60 V
  • The gate driver cannot provide an adequate 10 V drive

Check before use

  • Thermal design and PCB copper area
  • Switching loss at the intended frequency
  • SOA margin for transient load conditions

Key specifications

Drain-source voltage
60 V
Maximum RDS(on)
3.5 mOhm at VGS = 10 V
Continuous drain current
130 A at TC = 25 C
Package
TO-263

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargersMotor drivers

Datasheet

5887e01fcb84b4f42786bae225861641_E060N3P5DH1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E060N3P5DH1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E060N3P5DH1 is an Existar 60 V N-channel trench MOSFET supplied in a TO-263 package. Its maximum drain-source on-resistance is 3.5 mOhm at VGS = 10 V and ID = 20 A.