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E060N8P5CL1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E060N8P5CL1 product

E060N8P5CL1

MOSFETs - Single

N-channel MOSFET60 VTO-2528.5 mΩPower switching

E060N8P5CL1 is a 60 V N-channel TO-252 MOSFET specified for low-resistance power switching, with 8.5 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • Low-side power switching with a 10 V gate driver
  • Compact DC/DC power stages
  • Motor-driver switching stages within 60 V rating

Avoid if

  • The application requires a verified logic-level MOSFET at gate drive below 4.5 V
  • Thermal dissipation cannot be supported by the PCB and TO-252 tab
  • A confirmed lifecycle or qualification status is mandatory

Check before use

  • Use the 8.5 mΩ maximum value only at VGS=10 V and the stated test condition
  • At VGS=4.5 V, use the 11 mΩ maximum RDS(on) rating
  • Confirm transient voltage remains below the 60 V VDS rating

Key specifications

Drain-source voltage
60 V
Continuous drain current
64 A at TC=25°C
Maximum RDS(on)
8.5 mΩ at VGS=10 V, ID=12 A
Total gate charge
12 nC typ
Package
TO-252

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargersMotor drivers

Datasheet

fa72d6b15b4c5191c661c79cdabb666f_E060N8P5CL1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E060N8P5CL1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E060N8P5CL1 is an Existar N-channel power MOSFET rated for 60 V drain-source voltage in a TO-252 package. Its maximum on-resistance is 8.5 mΩ at VGS=10 V and ID=12 A.