E068N8P5CH1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E068N8P5CH1 product

E068N8P5CH1

MOSFETs & IGBTs

68 V MOSFETN-channelTO-2528.5 mΩ

E068N8P5CH1 is a 68 V N-channel MOSFET in TO-252 with 8.5 mΩ maximum on-resistance at a 10 V gate drive.

Best for

  • DC/DC conversion
  • Power switching
  • PD charger and motor-driver circuits

Avoid if

  • The application requires a verified lifecycle or supply commitment that is not present in the supplied data.

Check before use

  • PCB thermal path and case-temperature assumptions
  • Gate-driver voltage and switching losses
  • Avalanche, body-diode, and safe-operating-area requirements

Key specifications

VDS
68 V
ID at TC=25°C
69 A
RDS(on), max
8.5 mΩ at VGS=10 V
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargerMotor driver

CAD Models

Download ECAD models for E068N8P5CH1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Existar 68 V N-channel power MOSFET supplied in a TO-252 package.