E080N8P7DH1 Datasheet, Specs, Alternatives & ECAD | Existar | PartGenie

AI summary

E080N8P7DH1 product

E080N8P7DH1 is an 80 V N-channel MOSFET with 8.7 mΩ maximum on-resistance at 10 V gate drive, supplied in a TO-263 package.

Best for

DC/DC conversion
Power switching
PD charger power stages
Motor drivers

Avoid if

The design requires a package other than TO-263
The application exceeds the 80 V drain-source rating or the stated thermal limits

Check before use

Gate-drive voltage
PCB and heatsink thermal design
RDS(on) at operating temperature
Avalanche and body-diode operating conditions

Key specifications

VDS: 80 V
RDS(on): 8.7 mΩ max at VGS=10 V
ID: 80 A at TC=25°C
Package: TO-263

Compliance & Environment

RoHS: compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

DC/DC conversionPower switchPD chargerMotor driver

Datasheet

6ba9e25c66860ec3159359608663c466_E080N8P7DH1.pdf

800 KB

CAD Models

Download ECAD models for E080N8P7DH1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Existar 80 V N-channel power MOSFET in a TO-263 package. The datasheet specifies 8.7 mΩ maximum RDS(on) at VGS=10 V and ID=40 A.