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E100N1P5OH1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E100N1P5OH1 product

E100N1P5OH1

FETs

N-channel MOSFET100 V1.5 mΩ330 ATOLL-8Power MOSFET

E100N1P5OH1 is a 100 V N-channel power MOSFET for high-current switching, with 1.5 mΩ maximum RDS(on) at a 10 V gate drive and a TOLL-8 package.

Best for

  • High-current DC/DC switching
  • Power switches with 10 V gate drive
  • Motor-drive switching stages

Avoid if

  • A guaranteed low RDS(on) at 4.5 V gate drive is required
  • Thermal design cannot support high conduction current

Check before use

  • Verify worst-case junction temperature and thermal interface
  • Check gate-driver capability for 258 nC typical total gate charge
  • Validate avalanche and switching-transient conditions

Key specifications

Drain-source voltage
100 V
Continuous drain current
330 A at TC=25°C
Maximum RDS(on)
1.5 mΩ at VGS=10 V, ID=10 A
Package
TOLL-8

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingMotor drives

Datasheet

94236791a3caa42efdc97d84f212148f_E100N1P5OH1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E100N1P5OH1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E100N1P5OH1 is an Existar 100 V N-channel trench power MOSFET in a TOLL-8 package. Its maximum drain-source on-resistance is 1.5 mΩ at VGS=10 V and ID=10 A.