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E100N6P0HL1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E100N6P0HL1 product

E100N6P0HL1

FETs

N-channel MOSFET100 V6 mΩPDFN5x6Power switching

E100N6P0HL1 is a 100 V N-channel power MOSFET for low-loss switching where a PDFN5x6 footprint and 10 V gate drive are suitable.

Best for

  • 100 V DC/DC power switching
  • PD charger power stages
  • Low-side or synchronous switching with 10 V gate drive

Avoid if

  • Applications requiring guaranteed low RDS(on) with only 4.5 V gate drive
  • Designs without sufficient copper area or thermal path
  • Circuits exceeding 100 V drain-source stress

Check before use

  • VDS transient margin
  • Gate-driver voltage and peak current
  • PCB thermal resistance
  • Switching and body-diode losses

Key specifications

Drain-source voltage
100 V
Continuous drain current
62 A at TC=25°C
Maximum RDS(on)
6 mΩ at VGS=10 V, ID=20 A
Package
PDFN5x6, 8-pin

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC conversionPower switchingPD chargersMotor drivers

Datasheet

fedc86fc7658e15b066acf80e3fbc437_E100N6P0HL1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E100N6P0HL1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E100N6P0HL1 is an Existar 100 V N-channel trench power MOSFET in an 8-pin PDFN5x6 surface-mount package. Its specified maximum RDS(on) is 6 mΩ at VGS=10 V and ID=20 A.