What should engineers review before using E100N8P5HL1?

Check RDS(on) at the actual gate-drive voltage, transient and steady-state thermal conditions, safe-operating-area limits, switching losses, and the required PCB copper area. The datasheet specifies 8.5 mΩ maximum at VGS=10 V and 11.5 mΩ maximum at VGS=4.5 V.

What is the pinout of E100N8P5HL1?

Use the E100N8P5HL1 datasheet for the official pinout diagram and pin names. In PartGenie, ask Datasheet AI about E100N8P5HL1 pinout to locate pins, power rails, and interface signals before layout.

E100N8P5HL1 Datasheet, Specs, Alternatives & ECAD | Existar

AI summary

E100N8P5HL1 is a 100 V N-channel PDFN5x6 power MOSFET with 8.5 mΩ maximum RDS(on) at 10 V gate drive and a 45 A continuous-current rating at TC=25°C.

Best for

100 V DC/DC switching
Power-switch stages
PD charger power paths
Motor-driver switching

Avoid if

The design requires verified lifecycle or MSL data
The available gate drive cannot adequately enhance the MOSFET
Thermal design cannot support the intended conduction and switching losses

Check before use

Confirm RDS(on) at the actual VGS and junction temperature.
Validate SOA and transient thermal impedance for the load profile.
Use the PDFN5x6 land pattern and drain thermal pad appropriate to the package drawing.