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E100P045CL1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E100P045CL1 product

E100P045CL1

MOSFETs - Single

P-channel MOSFET100 VTO-25245 mΩPower switching

E100P045CL1 is a -100 V P-channel TO-252 MOSFET for high-side or polarity-sensitive power switching where a -10 V gate drive is available.

Best for

  • P-channel high-side switching
  • Fast power switching
  • Up to 100 V negative VDS applications

Avoid if

  • A low-voltage gate drive cannot provide adequate negative VGS
  • Thermal design cannot support required conduction loss
  • Verified compliance or lifecycle documentation is mandatory

Check before use

  • Confirm VGS remains within ±20 V during transients
  • Calculate conduction loss using worst-case RDS(on)
  • Validate TO-252 thermal performance on the target PCB

Key specifications

Drain-source voltage
-100 V
Continuous drain current at TC=25°C
-40 A
Maximum RDS(on)
45 mΩ at VGS=-10 V
Package
TO-252
Junction temperature range
-55°C to 150°C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingFast switching circuits

Datasheet

2b4d7c262bd06dfc13c6d8963badb176_E100P045CL1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E100P045CL1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E100P045CL1 is an Existar P-channel trench DMOS power MOSFET in a TO-252 package. It is rated for -100 V VDS and has a maximum RDS(on) of 45 mΩ at VGS=-10 V and ID=-15 A.