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E18P100KC AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E18P100KC product

E18P100KC

MOSFETs

P-channel MOSFET100 VTO-252Power switching

E18P100KC is a -100 V P-channel MOSFET in TO-252 with 110 mΩ maximum on-resistance at VGS=-10 V and -18 A continuous drain-current rating at TC=25°C.

Best for

  • High-side switching
  • Power switching where a P-channel MOSFET is suitable

Avoid if

  • The design requires a confirmed lifecycle or supply commitment
  • The application exceeds the stated voltage, current, temperature, or gate-voltage limits

Check before use

  • VDS transients and avalanche conditions
  • RDS(on) at actual VGS and junction temperature
  • PCB thermal design and continuous current
  • Gate-source voltage during startup and switching

Key specifications

Polarity
P-channel
VDS
-100 V
ID
-18 A at TC=25°C
RDS(on)
110 mΩ max at VGS=-10 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Fast switchingHigh-side load switching

Datasheet

ce986293538e368df7332d51d877f0d6_E18P100KC.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for E18P100KC: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E18P100KC is an Existar P-channel trench MOSFET rated for -100 V drain-source voltage. It is supplied in a TO-252 package.