E40P100KC AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

E40P100KC product

E40P100KC

MOSFETs & IGBTs

P-channel MOSFET100 VTO252power switching

E40P100KC is a P-channel 100 V MOSFET with 45 mΩ maximum on-resistance at VGS=-10 V, supplied in a TO252 package.

Best for

  • P-channel fast-switching power stages
  • High-side switching where the documented voltage and current limits are suitable

Avoid if

  • The application requires a documented lifecycle guarantee
  • The thermal path cannot support the required dissipation

Check before use

  • RDS(on) at the actual gate voltage and operating temperature
  • Case-to-board thermal performance
  • Drain, source, and gate connection in the TO252 footprint

Key specifications

Channel
P-channel
VDS
-100 V
Continuous ID
-40 A at TC=25°C
RDS(on), max
45 mΩ at VGS=-10 V

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Fast switching

CAD Models

Download ECAD models for E40P100KC: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

E40P100KC is a P-channel power MOSFET specified for a -100 V drain-source voltage and -40 A continuous drain current at a case temperature of 25°C.