For BusinessPricing
Request a demo

EPC2203 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

EPC2203 product

EPC2203

MOSFETs - Single

80 VGaN FETAEC-Q101bare die80 mOhmlow gate charge

EPC2203 is an 80 V AEC-Q101 qualified enhancement-mode GaN FET die for compact, fast-switching power stages. It has 80 mOhm typical RDS(on) and 670 pC typical total gate charge.

Best for

  • High-frequency DC-DC converters
  • Lidar and pulsed-power circuits
  • Wireless power stages
  • Class-D audio

Avoid if

  • A packaged transistor is required
  • The assembly process cannot support solder-bumped die

Check before use

  • Gate-drive voltage limits
  • Thermal resistance in the intended board assembly
  • Die land pattern and stencil compatibility

Key specifications

Drain-to-source voltage
80 V
Continuous drain current
1.7 A
On-resistance
80 mOhm typical
Total gate charge
670 pC typical
Die size
0.9 mm x 0.9 mm

Compliance & Environment

RoHS
ROHS3 Compliant

Application

High power density DC-DC convertersLidar and pulsed powerWireless powerClass-D audio

Datasheet

EPC2203_datasheet.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for EPC2203: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

EPC2203 is an automotive AEC-Q101 qualified, enhancement-mode eGaN power transistor. It is supplied as a 0.9 mm x 0.9 mm passivated die with four solder bumps.