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ES15N10G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ES15N10G product

ES15N10G

MOSFETs - Single

N-ChannelMOSFET100VTO-252

The ES15N10G is a 100V N-channel trench MOSFET in a TO-252 package, designed for efficient power switching and DC-DC conversion.

Best for

  • DC-DC converters
  • Load switches
  • Portable power management

Avoid if

  • Applications requiring extremely low gate threshold voltages below 1V
  • High-frequency switching where ultra-low gate charge is critical

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

Vdss
100 V
Id (Tc=25°C)
12 A
RDS(on) (Typ)
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Conversion

Datasheet

c144537718bbbf754a6864f068682eb2_2210271700_ElecSuper-ES15N10G_C5224293.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ES15N10G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET using trench technology, optimized for low RDS(on) and low gate charge in power management applications.