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ESN6484 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ESN6484 product

ESN6484

MOSFETs - Single

N-Channel100VTrench MOSFET

The ESN6484 is a 100V N-channel MOSFET designed for efficient power switching and DC-DC conversion in a compact PDFN5*6-8L package.

Best for

  • DC-DC conversion
  • Power switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
100 V
Id
11 A
RDS(on)
91 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC-DC Conversion

Datasheet

ea139e3e7cb1823f274d955c2ea08608_2210271700_ElecSuper-ESN6484_C5224311.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ESN6484: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The ESN6484 is an N-channel enhancement mode MOSFET utilizing trench technology, optimized for low RDS(ON) and low gate charge.