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FDB12N50TM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDB12N50TM product

FDB12N50TM

MOSFETs - Single

MOSFETN-Channel500VUniFET

The FDB12N50TM is a 500V, 11.5A N-Channel UniFET MOSFET in a D2PAK package, optimized for high-voltage switching power applications.

Best for

  • Switching power supplies
  • PFC circuits

Avoid if

  • Low voltage applications where lower Rds(on) devices are more efficient

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
500 V
Id
11.5 A
Rds(on)
650 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power SupplyLighting

Datasheet

Fairchild-Semiconductor-company-11.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDB12N50TM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel UniFET MOSFET designed for high-voltage applications, featuring 500V breakdown voltage and 11.5A current capability.