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FDD3860-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDD3860-HXY product

FDD3860-HXY

MOSFETs - Single

MOSFETN-Channel100VDPAK

The FDD3860 is a 100V N-Channel MOSFET in a DPAK package, suitable for general-purpose switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring extremely low RDS(on) below 10mΩ

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
100 V
ID
30 A
RDS(on)
48 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

b4abcb0989fa8dd9347e774c7add1c07_2403261740_HXY-MOSFET-FDD3860-HXY_C22367074.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDD3860-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDD3860 is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications.