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FDD6612A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDD6612A-HXY product

FDD6612A-HXY

MOSFETs - Single

MOSFETN-Channel30VDPAK

The FDD6612A is a 30V, 20A N-Channel MOSFET in a DPAK package, designed for battery protection, load switching, and UPS applications.

Best for

  • Battery protection circuits
  • Load switching
  • Uninterruptible power supplies

Avoid if

  • Applications requiring voltages exceeding 30V
  • High-frequency switching where gate charge might be a limiting factor

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
20 A
RDS(ON)
25 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

31e75e1872327dea3e334cab42476c45_2403261655_HXY-MOSFET-FDD6612A-HXY_C22366530.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDD6612A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDD6612A is an N-Channel enhancement mode MOSFET utilizing advanced trench technology to achieve low RDS(ON) and low gate charge.