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FDD6670A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDD6670A-HXY product

FDD6670A-HXY

MOSFETs - Single

N-ChannelMOSFET30V80A

The FDD6670A is a 30V, 80A N-Channel MOSFET in a TO-252-2L package, optimized for low RDS(ON) and efficient switching in power management applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring voltages significantly above 30V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
80 A
RDS(ON)
6.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

3ef78d52763c920b68bf236744883d0c_2403251713_HXY-MOSFET-FDD6670A-HXY_C22366446.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDD6670A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDD6670A is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications, featuring a 30V drain-source voltage and 80A continuous current rating.