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FDD8424H-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDD8424H-HXY product

FDD8424H-HXY

MOSFETs - Arrays

Dual MOSFETN+P ChannelTrench Technology

The FDD8424H is a dual N+P-channel MOSFET in a TO-252-4L package, designed for switching applications like wireless charging and motor drivers.

Best for

  • Wireless charging
  • Motor control

Avoid if

  • High-power applications exceeding 40W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
40V / -40V
ID
20A / -20A

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Wireless ChargingMotor Control

Datasheet

e1d774d9a3546a72f735c4e6673db3a9_2403261737_HXY-MOSFET-FDD8424H-HXY_C22366760.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDD8424H-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N+P-channel enhancement mode MOSFET utilizing advanced trench technology.