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FDMC510P-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDMC510P-HXY product

FDMC510P-HXY

MOSFETs - Single

P-ChannelMOSFETTrench Technology

The FDMC510P is a P-Channel MOSFET in a DFN3x3-8L package, optimized for battery protection and load switching with low RDS(ON).

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring N-Channel logic
  • High-voltage systems exceeding 20V

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-20 V
ID
-60 A
RDS(on)
< 10 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

29733be0a03b8f9b73e20b67e90af1ff_2404231719_HXY-MOSFET-FDMC510P-HXY_C22366830.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDMC510P-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, designed for efficient switching in compact applications.