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FDMS0312AS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDMS0312AS-HXY product

FDMS0312AS-HXY

MOSFETs - Single

N-ChannelMOSFET30VDFN5X6

The FDMS0312AS is a 30V N-channel SGT MOSFET in a DFN5X6-8L package, optimized for low RDS(on) and fast switching in power applications.

Best for

  • Synchronous rectification
  • DC-DC converters
  • Motor control

Avoid if

  • Applications requiring >30V VDS
  • High-temperature environments exceeding 150°C

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
60 A
RDS(on)
5.8 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyMotor Control

Datasheet

2bf78caa1052705719ebeecb7183eb9e_2404231719_HXY-MOSFET-FDMS0312AS-HXY_C22367004.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDMS0312AS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET utilizing SGT technology, designed for high-efficiency power conversion and motor control.