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FDMS8880-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDMS8880-HXY product

FDMS8880-HXY

MOSFETs - Single

MOSFETN-Channel30VDFN5X6

The FDMS8880 is a 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switches
  • UPS systems

Avoid if

  • Applications requiring voltages above 30V
  • High-temperature environments without proper heatsinking

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
60 A
RDS(on)
8.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

c73481919aac33390948a6ea9ff086d0_2405061706_HXY-MOSFET-FDMS8880-HXY_C22367092.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDMS8880-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications.