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FDN338P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN338P product

FDN338P

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench DMOS

The FDN338P is a P-Channel trench DMOS MOSFET in a SOT-23 package, optimized for high-efficiency, fast-switching applications like load switches in portable electronics.

Best for

  • Notebook computers
  • Load switching
  • Hand-held instruments

Avoid if

  • Applications requiring high-voltage (exceeding -20V) or high-current (exceeding -2A) handling.

Check before use

  • Gate threshold voltage (VGS(th)) and thermal dissipation requirements.

Key specifications

VDS
-20 V
ID
-2.0 A
RDS(on)
85 mΩ (Typ)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

fd8b0dfdd0dbd4de2a2c077775f1f083_2109031030_TECH-PUBLIC-FDN338P_C2890130.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN338P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDN338P is a P-Channel enhancement mode power MOSFET manufactured by MSKSEMI, utilizing trench DMOS technology for improved switching performance.