ProjectsPricingInsights

FDN339AN-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN339AN-HXY product

FDN339AN-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-23-3L

The FDN339AN is a 20V N-Channel MOSFET in a SOT-23-3L package, optimized for low-voltage switching applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-voltage applications exceeding 20V
  • High-power designs requiring significant heat sinking

Check before use

  • Thermal resistance (RθJA = 100°C/W)
  • Gate drive voltage levels

Key specifications

VDS
20 V
ID
6 A
RDS(ON)
27 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switch

Datasheet

eedc2d9977322c05b7772200def2dd70_2403261736_HXY-MOSFET-FDN339AN-HXY_C22366731.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN339AN-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDN339AN is an N-Channel enhancement mode MOSFET designed for efficient switching in low-voltage applications like battery protection and load switches.