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FDN357N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN357N-HXY product

FDN357N-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2330V

The FDN357N is a 30V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
4 A
RDS(on)
29 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

e2052185893d9e43060c8482ee2c0d99_2403261743_HXY-MOSFET-FDN357N-HXY_C22367348.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN357N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, suitable for low-voltage switching applications.