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FDN359AN-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN359AN-HXY product

FDN359AN-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2330V

The FDN359AN is a 30V, 4A N-Channel MOSFET in a SOT-23 package, designed for efficient switching and battery protection.

Best for

  • Battery protection
  • Low-voltage switching

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
30 V
ID
4 A
RDS(on)
38 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

201ee3f6b5e5e7ddf7397805a426846f_2403261743_HXY-MOSFET-FDN359AN-HXY_C22367345.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN359AN-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDN359AN is an N-Channel Enhancement Mode MOSFET from HXY MOSFET, optimized for low RDS(ON) and low gate charge using trench technology.