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FDN360P-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN360P-HXY product

FDN360P-HXY

MOSFETs

P-ChannelMOSFETSOT-2330V

The FDN360P is a -30V, -4.1A P-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • PWM control

Avoid if

  • Applications requiring high-current handling beyond 4A
  • Extreme high-temperature environments without proper cooling

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(ON)
56 mΩ
Package
SOT-23

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

4ea9fa3720909b83f08320d33cbb9f25_2403261742_HXY-MOSFET-FDN360P-HXY_C22367255.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN360P-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDN360P is a P-Channel enhancement mode MOSFET designed for surface mount applications, featuring advanced trench technology for efficient power switching.