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FDN537N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN537N-HXY product

FDN537N-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-2330V

The FDN537N is a 30V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching applications.

Best for

  • Battery management
  • Low-voltage load switching

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design and gate drive compatibility

Key specifications

Vdss
30 V
Id
5.8 A
RDS(on)
22 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

5bab5a4335fc2387a9fd6a689075200b_2403261654_HXY-MOSFET-FDN537N-HXY_C22366719.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN537N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching at low gate voltages.