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FDN86501LZ-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDN86501LZ-HXY product

FDN86501LZ-HXY

MOSFETs - Single

MOSFETN-Channel60VSOT-23-3L

The FDN86501LZ is a 60V, 4.5A N-Channel enhancement mode MOSFET in a SOT-23-3L package, designed for efficient switching in power management and battery protection circuits.

Best for

  • Battery protection
  • Load switching
  • PWM applications

Avoid if

  • Applications requiring higher than 4.5A continuous current or significantly higher voltage ratings.

Check before use

  • Thermal dissipation on the PCB, as the SOT-23-3L package has limited surface area.

Key specifications

VDS
60 V
ID
4.5 A
RDS(ON) @ 10V
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

7cc91161cd7a93adbccd4db341840c58_2403251714_HXY-MOSFET-FDN86501LZ-HXY_C22366419.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDN86501LZ-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for low RDS(ON) and low gate charge.