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FDS4897C-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS4897C-HXY product

FDS4897C-HXY

MOSFETs - Arrays

MOSFETDual ChannelSOP-8

The FDS4897C is a dual N+P-channel MOSFET in an SOP-8 package, designed for battery protection and switching applications.

Best for

  • Battery protection circuits
  • Compact switching applications

Avoid if

  • High-power applications exceeding 1.67W dissipation

Check before use

  • Gate threshold voltage and thermal resistance

Key specifications

VDS
40V / -40V
ID
7.2A / -6.5A
RDS(on)
26mΩ / 44mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

cfa6da80204f2f43d330638fdec0b749_2403261743_HXY-MOSFET-FDS4897C-HXY_C22367333.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS4897C-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel and P-channel enhancement mode MOSFET using trench technology.