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FDS4935BZ-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS4935BZ-HXY product

FDS4935BZ-HXY

MOSFETs - Arrays

MOSFETP-ChannelDualSOP-8

The FDS4935BZ is a dual P-channel MOSFET in an SOP-8 package, designed for efficient power switching in PWM and load switch applications.

Best for

  • PWM applications
  • Load switching

Avoid if

  • Applications requiring high-side N-channel switching
  • Extreme high-power environments exceeding 1.5W dissipation

Check before use

  • Gate drive voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-8.5 A
RDS(on)
18 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

e91ffc71984c8072693ea4ac7c87c3b8_2404231719_HXY-MOSFET-FDS4935BZ-HXY_C22367183.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS4935BZ-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-channel enhancement mode MOSFET using advanced trench technology, housed in an SOP-8 package.