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FDS6670A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS6670A-HXY product

FDS6670A-HXY

MOSFETs - Single

MOSFETN-Channel30VSOP-8

The FDS6670A is a 30V N-Channel MOSFET in an SOP-8 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-voltage applications exceeding 30V
  • Applications requiring extremely low thermal footprints

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

Vdss
30 V
Id
18 A
RDS(on)
5.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

723975623a29118ede9b1f66f41f41c0_2403251713_HXY-MOSFET-FDS6670A-HXY_C22366456.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS6670A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications using trench technology.