ProjectsPricingInsights

FDS6676AS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS6676AS-HXY product

FDS6676AS-HXY

MOSFETs - Single

MOSFETN-Channel30VSOP-8

The FDS6676AS is a 30V N-Channel MOSFET in an SOP-8 package, optimized for low RDS(on) and efficient switching in battery protection and power management circuits.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-voltage applications exceeding 30V
  • Applications requiring extremely high power dissipation

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
18 A
RDS(on)
5.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

79063dd52f4c4ace771be57549491b01_2403251713_HXY-MOSFET-FDS6676AS-HXY_C22366462.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS6676AS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDS6676AS is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications, featuring low on-resistance and low gate charge.