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FDS6680AS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS6680AS-HXY product

FDS6680AS-HXY

MOSFETs - Single

N-ChannelMOSFET30VSOP-8

The FDS6680AS is a 30V, 15A N-Channel MOSFET in an SOP-8 package, designed for efficient switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring higher than 30V drain-source voltage

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
15 A
RDS(ON)
10 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

67b79f0a8159721f85a55e07fa6c5aaa_2403261654_HXY-MOSFET-FDS6680AS-HXY_C22366890.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS6680AS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.