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FDS6910-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS6910-HXY product

FDS6910-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelSOP-8

The FDS6910-HXY is a dual N-channel MOSFET in an SOP-8 package, optimized for low-voltage switching applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
30V
Id
11.5A
RDS(on)
<30mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

66dc1312fcdd19905ba363cd99d7bea3_2403261740_HXY-MOSFET-FDS6910-HXY_C22367033.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS6910-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, designed for efficient switching.