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FDS6912A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS6912A-HXY product

FDS6912A-HXY

MOSFETs - Arrays

Dual MOSFETN-ChannelSOP-8

The FDS6912A is a dual N-channel MOSFET in an SOP-8 package, designed for low-voltage switching and battery protection.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
8.5 A
RDS(ON)
18 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

817006aedd6a8cbe1c8fe4a95dc80bd5_2404231718_HXY-MOSFET-FDS6912A-HXY_C22366607.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS6912A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, optimized for low gate charge and low RDS(ON).