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FDS6975-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS6975-HXY product

FDS6975-HXY

MOSFETs - Arrays

MOSFETP-ChannelDualSOP-8

The FDS6975 is a dual P-channel enhancement mode MOSFET designed for PWM and load switching applications.

Best for

  • PWM control
  • Load switching

Avoid if

  • High-power applications exceeding 1.5W dissipation

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
-30 V
ID
-8.5 A
RDS(ON)
18 mΩ (max @ -10V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

90ddec1d22c75cc13bd915ce7d5b1385_2404231719_HXY-MOSFET-FDS6975-HXY_C22367335.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS6975-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-channel MOSFET in an SOP-8 package, utilizing trench technology for low RDS(ON) and low gate charge.