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FDS9945-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDS9945-HXY product

FDS9945-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelSOP-8

The FDS9945-HXY is a dual N-channel MOSFET in an SOP-8 package, designed for 60V, 6.5A switching applications.

Best for

  • Battery management
  • Power switching

Avoid if

  • High-power applications exceeding 2.1W dissipation

Check before use

  • Thermal design

Key specifications

Vdss
60 V
Id
6.5 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

af3e3e70d3c5f681212ffb67bb1be0ae_2403261655_HXY-MOSFET-FDS9945-HXY_C22366501.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDS9945-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET utilizing trench technology, optimized for low RDS(ON) and low gate charge.