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FDV301N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDV301N-HXY product

FDV301N-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-2330V

The FDV301N is a 30V N-Channel MOSFET in a SOT-23 package, designed for low-power switching applications like battery protection.

Best for

  • Battery protection circuits
  • Small load switching
  • UPS systems

Avoid if

  • High-current power switching applications

Check before use

  • Gate drive voltage levels
  • Thermal dissipation limits

Key specifications

VDS
30 V
ID
0.1 A
RDS(ON)
< 2.2 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switching

Datasheet

b75f110f0fbcdffe2ae1c6cf346e3038_2403261739_HXY-MOSFET-FDV301N-HXY_C22366936.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDV301N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDV301N is an N-Channel enhancement mode MOSFET using trench technology, optimized for low-voltage switching applications.