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FDV303N AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDV303N product

FDV303N

MOSFETs - Single

N-ChannelMOSFETSOT-2330V

The FDV303N is a 30V N-Channel trench DMOS MOSFET in a SOT-23 package, optimized for high-efficiency switching in compact power management circuits.

Best for

  • Notebook power management
  • Load switching
  • LED driver circuits

Avoid if

  • Applications requiring high-current handling beyond 2A
  • High-temperature environments exceeding 150°C

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
2.0 A
RDS(ON)
300 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

NotebookLoad SwitchLED applications

Datasheet

Fairchild-Semiconductor-company-11.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDV303N: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FDV303N is an N-Channel enhancement mode power MOSFET manufactured by MSKSEMI, utilizing trench DMOS technology to achieve low on-state resistance and fast switching speeds.