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FDY102PZ-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FDY102PZ-HXY product

FDY102PZ-HXY

MOSFETs

P-ChannelMOSFETSOT-523Trench Technology

The FDY102PZ is a compact P-Channel MOSFET in an SOT-523 package, optimized for low-voltage switching and battery protection applications.

Best for

  • Battery protection
  • Low-voltage load switching

Avoid if

  • High-current applications exceeding 0.66A

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-20 V
ID
-0.66 A
RDS(on)
560 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery protectionLoad switch

Datasheet

702ba03830f116a8d72168f03d1120d8_2403261740_HXY-MOSFET-FDY102PZ-HXY_C22367051.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FDY102PZ-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using advanced trench technology, designed for low-voltage switching applications.