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FQB5N90TM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQB5N90TM product

FQB5N90TM

MOSFETs - Single

MOSFETN-Channel900VD2PAK

The FQB5N90TM is a 900V, 5.4A N-Channel QFET MOSFET in a D2PAK package, optimized for high-voltage switching applications.

Best for

  • High-voltage power conversion
  • PFC circuits

Avoid if

  • Low-voltage applications where lower Rds(on) devices are more efficient

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage

Key specifications

Vdss
900 V
Id
5.4 A
Rds(on)
2.3 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power SupplyIndustrial

Datasheet

46149.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQB5N90TM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET from onsemi, featuring 900V drain-source voltage and 5.4A continuous drain current.