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FQD13N06L-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQD13N06L-HXY product

FQD13N06L-HXY

MOSFETs - Single

MOSFETN-Channel60V

The FQD13N06L is a 60V N-Channel MOSFET in a TO-252-2L package, optimized for low-voltage switching applications.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • High-voltage applications exceeding 60V

Check before use

  • Thermal design and gate drive compatibility

Key specifications

VDS
60 V
ID
20 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

fac99316d865f55c51edb30c525cd83d_2404231719_HXY-MOSFET-FQD13N06L-HXY_C22366904.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQD13N06L-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using advanced trench technology, designed for efficient switching.