ProjectsPricingInsights

FQD13N10L-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQD13N10L-HXY product

FQD13N10L-HXY

MOSFETs - Single

MOSFETN-Channel100V

The FQD13N10L is a 100V N-Channel MOSFET in a TO-252-2L package, suitable for power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring extremely high reliability or life-support systems

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

Vdss
100 V
Id
15 A
RDS(on)
112 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

10ca7e990835add88d1bb68a49832d41_2404231719_HXY-MOSFET-FQD13N10L-HXY_C22367151.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQD13N10L-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, rated for 100V and 15A.