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FQD2N60CTM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQD2N60CTM product

FQD2N60CTM

MOSFETs - Single

MOSFET600VN-ChannelD-PAK

The FQD2N60CTM is a 600V, 1.9A N-Channel MOSFET in a D-PAK package, optimized for high-efficiency power conversion applications.

Best for

  • Switched-mode power supplies
  • Power factor correction
  • Electronic lamp ballasts

Avoid if

  • Applications requiring very low RDS(on) or high current handling beyond 1.9A.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDSS
600 V
ID
1.9 A
RDS(on)
4.7 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
nan
MSL
nan
ECCN
EAR99
HTSUS
8542.39.0001

Application

Power

Datasheet

46291.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQD2N60CTM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V N-Channel enhancement mode power MOSFET utilizing planar stripe DMOS technology, designed for high-efficiency switching applications.