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FQD50N06-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQD50N06-HXY product

FQD50N06-HXY

MOSFETs - Single

N-ChannelMOSFET60V50A

The FQD50N06-HXY is a 60V, 50A N-Channel MOSFET in a TO-252-2L package, optimized for low RDS(on) and efficient switching in power management applications.

Best for

  • Battery management
  • Power switching

Avoid if

  • Applications requiring extremely low gate threshold voltages below 1.2V

Check before use

  • Thermal dissipation requirements at 50A

Key specifications

Vdss
60 V
Id
50 A
RDS(on)
15 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

31f519690cfeac249b6fa80b735b1735_2301040930_HXY-MOSFET-FQD50N06-HXY_C5337189.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQD50N06-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching, featuring a 60V drain-source breakdown voltage and 50A continuous current capability.