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FQD7P06-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQD7P06-HXY product

FQD7P06-HXY

MOSFETs - Single

P-ChannelMOSFET60VTrench

The FQD7P06 is a -60V, -10A P-Channel MOSFET in a TO-252-2L package, optimized for switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • Brushless motor control

Avoid if

  • Applications requiring extremely low RDS(on) or high-frequency switching beyond the device's gate charge capabilities.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-60 V
ID
-10 A
RDS(on)
< 140 mΩ
Package
TO-252-2L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

1183445995bf9694a7e8039622743ebb_2404231718_HXY-MOSFET-FQD7P06-HXY_C22366778.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQD7P06-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The FQD7P06 is a P-Channel enhancement mode MOSFET using advanced trench technology, designed for efficient power switching.