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FQT7N10LTF-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FQT7N10LTF-ES product

FQT7N10LTF-ES

MOSFETs - Single

MOSFETN-Channel100VSOT-223

The FQT7N10LTF-ES is a 100V, 4A N-channel MOSFET in an SOT-223 package, designed for efficient power switching and DC-DC conversion.

Best for

  • DC-DC conversion
  • Power switching

Avoid if

  • High-power applications exceeding 4A continuous current

Check before use

  • Thermal dissipation requirements

Key specifications

Drain-Source Voltage
100 V
Continuous Drain Current
4 A
On-Resistance
120 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Conversion

Datasheet

295a4dfa4d0f83a8a6541634e1290f44_2406121142_ElecSuper-FQT7N10LTF-ES_C22464635.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FQT7N10LTF-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET featuring advanced trench technology for low RDS(ON) and low gate charge.