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FZT558TA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

FZT558TA product

FZT558TA

Transistors - Bipolar (BJT) - Single

PNPHigh VoltageBJT

The FZT558TA is a high-voltage PNP transistor designed for applications requiring up to 400V breakdown voltage and 200mA continuous collector current in an SOT223 surface-mount package.

Best for

  • High-voltage switching
  • Driver circuits

Avoid if

  • Applications exceeding 400V
  • High-frequency RF applications

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
-400 V
IC
-200 mA
Package
SOT223

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541290075.0

Application

Power Management

Datasheet

Diodes-Inc.-FZT558TA.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for FZT558TA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 400V PNP high-voltage bipolar junction transistor (BJT) manufactured by Diodes Incorporated, housed in an SOT223 package.