ProjectsPricingInsights

G01N20LE AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G01N20LE product

G01N20LE

MOSFETs - Single

MOSFETN-Channel200VPower Switch

The G01N20LE is a 200V N-Channel enhancement mode power MOSFET in a SOT-23-3L package, suitable for power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • Applications requiring high continuous current beyond 1.7A
  • High-power designs exceeding 1.5W dissipation

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
200 V
ID
1.7 A
RDS(on)
< 0.85 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power SwitchingDC/DC Converters

Datasheet

320059f0f2ea85a155a2e65d9f489826_2212160808_GOFORD-G01N20LE_C2840756.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G01N20LE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G01N20LE is an N-Channel enhancement mode power MOSFET from Goford Semiconductor, designed for high-voltage switching applications up to 200V.