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G080N10M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G080N10M product

G080N10M

MOSFETs - Single

MOSFETN-Channel100VPower

The G080N10M is a high-performance 100V, 180A N-Channel Power MOSFET utilizing advanced trench technology for low RDS(ON) and efficient switching in power management applications.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Low-power, space-constrained applications requiring smaller packages

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
100V
ID
180A
RDS(on)
5.6mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

38a4cf689aff6e5ecb8cc2fb4afaf5fa_2307191059_GOFORD-G080N10M_C7465415.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G080N10M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G080N10M is an N-Channel Enhancement Mode Power MOSFET designed for high-current power switching and DC/DC conversion.